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Multi Layer Aluminum Nitride (AlN)

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Aluminum Nitride Package
Aluminum Nitride Package
Aluminum Nitride Packages
Aluminum Nitride Packages
Multilayer AlN
Multilayer AlN
Thin Film AlN
Thin Film AlN
AlN Submount
AlN Submount

AdTech Ceramics is the leading manufacturer of custom designed multilayer aluminum nitride substrates. Aluminum nitride offers high thermal conductivity with an excellent coefficient of thermal expansion (CTE) match to silicon. The material system is stable from cryogenic to high temperatures making it ideal for imaging applications as well as high power amplifier multichip modules and heater applications.

Using patented hot press technology, AdTech Ceramics is able to offer multilayer MCM substrates up to 4.5" (114.3mm) square with hermetic via positional tolerances of +/- .15%. Flatness can be held within .0002" (5um) and additional mechanical features can be machined using diamond and/or ultrasonic tools. Surface metal is applied using industry standard photolithography and etching techniques providing a variety of metallization options to meet application requirements.

Design assistance and HFSS simulation is available for high frequency applications. Please see below for additional material specifications and download the Design and Capabilities Guideline for layout specific design rules.

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Multi Layer Aluminum Nitride (AlN) Capabilities

Material Properties and Specifications | Surface Metal Specifications | Additional Information

Material Properties and Specifications

Color
Translucent Gray
Density
3.26 g/cc (0.118 #/cu. in.)
Hardness
1200 kg/mm2 (Knoop)
Flexural Strength
280 MPa (40 psi x 103)
Youngs Modulus
340 GPa (49 psi x 106)
Shear Modulus
140 GPa ( 20 psi x 106)
Surface Finish
<0.76 µm ( >30 µ") standard
Thermal Expansion (25-300°C)
4.00 10-6/°C (2.2 10-6/°F)
Thermal Expansion (25-500°C)
4.50 10-6/°C ( 2.5 10-6/°F)
Thermal Conductivity (25°C)
160 (1174) W/mK ( 1174 BTU-in/ft2-h-°F)
Dielectric Strength
13.0 kv/mm ( 330 volts/mil)
Volume Resistivity
>1014 ohm-cm2/cm
Dielectric Constant (1MHz)
8.6(Extrapolated Calculation)
Dielectric Constant (10 GHz)
8.2
Dissipation Factor (1 MHz)
0.0001
Loss Factor (10 GHz)
0.0010
Metallization Options
Tungsten
Tungsten-Moly
Metallization Resistances
Buried: .015-.020 ohm/sq
Surface: .005 ohm/sq (Gold Plated)
Brazed Component Materials
Alloy 194
Alloy 42
Copper Alloy
Copper Tungsten
Kovar
Molybdenum
Production Volumes
Prototype to High Production
Acceptable File Formats
DWG
DXF
Gerber Plot Data (RS274, RS274X) Barco PDF
IGES
STEP
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Surface Metal Specifications

Types of Surface Metal
Gold (Au), Copper (Cu), Silver (Ag), Indium (In), Gold/Tin (AuSn) and others
Types of barrier metals
Nickel (Ni), Platinum (Pt), Molybdenum (Mo) and others
Seed Layers
Titanium/Tungsten (TiW)
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Additional Information

Applications
Focal plane array substrates
Heater
Multi-Chip Modules (MCM)
Multilayer hermetic PWB
Industries Served
High Frequency/High Temperature Electronics
High Reliability Industrial/Commercial
Medical
Military
Optoelectronics
Telecommunications
Certifications
DFARS 252.225-7014 (Alternate 1) Compliant
ISO 9001:2008 Certified
AS9100C Certified
ITAR Compliant
MIL-I-45208
RoHS Directive Compliant
Software Used
AutoCAD®
Autodesk®
Autodesk® Inventor™
CAM 350
Gerber Plot
SolidWorks®
Design Files
DWG
DXF
Gerber Plot
IGS
IPC-D-356(A)
PDF
STEP
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